Silicon Carbide And Gallium Nitride Test Systems From Aehr Offer New Advanced Testing Capabilities

Aehr Test Systems has enhanced its FOX-P family of wafer-level test and burn-in systems.

FREMONT, CA: “Aehr has engaged with a significant number of silicon carbide and gallium nitride semiconductor suppliers from across the world, multiple power semiconductor experts from academia, as well as direct contact with automotive tier 1 module suppliers and automotive drive train and photovoltaic inverter manufacturers. Based on input from this wide range of manufacturers, module suppliers, and purchasers of these devices, we are extending our FOX-P wafer level test and burn-in platform to provide additional new engineering and production solutions featuring these options with up to 18 wafers to be tested in parallel at the same time. "By testing and burning in the devices in wafer form, this significantly lowers the cost of test as well as allows these companies to weed out early life failures that otherwise would show up in packaged or even more costly in multi-chip module form," says Gayn Erickson, President, and CEO of Aehr Test Systems. Aehr Test Systems, a global semiconductor test and reliability certification equipment provider, has come up with two new upgrades to its FOX-P series of wafer-level test and burn-in systems. Options such as the FOX Bipolar Voltage Channel Module (BVCM) and Very High Voltage Channel Module (VHVCM) allow additional enhanced test and burn-in capabilities for silicon-carbide and gallium-nitride power semiconductors on Aehrs FOX-P wafer-level test and burn-in systems. Silicon Carbide power devices and modules are gaining use in electric car drive trains and onboard and offboard electric vehicle chargers. Semiconductors based on Gallium Nitride are in the early phases of their application utilization, but it is anticipated that their employment in a wide range of power conversion applications, including solar, industrial, and other electrification infrastructure applications, would increase dramatically. The new cutting-edge wafer level test and burn-in capabilities enabled by the addition of the FOX-P BVCM and VHVCM options provide silicon carbide and gallium nitride semiconductor manufacturers with greater flexibility to address a broader range of stress and burn-in conditions to meet their engineering qualification and production requirements in FOX-P multi-wafer test and burn-in systems. These options are functional with new system shipments or upgrades of previously shipped FOX-P systems, with initial shipments anticipated to occur between 12 and 16 weeks after order placement.

The Bipolar Voltage Channel Module (BVCM) offers clients a broad range of bipolar voltage programmability from positive 40 volts to negative 30 volts applied to the gate for High-Temperature Gate Bias (HTGB) and Negative HTGB testing. The BVCM can deliver gate bias voltage to more than 3,000 dies per wafer and monitor the operation of each die individually. In conjunction with Aehrs proprietary WaferPak full-wafer Contactors, the BVCM provides a capability exclusive to producers of power silicon carbide diodes and MOSFETs, as well as E-mode and D-mode gallium nitride power MOSFETs. These tests are particularly important for threshold voltage (VTH) stabilization and gate oxide screening.

The Very High Voltage Channel Module (VHVCM) allows users to undertake High-Temperature Reverse Bias (HTRB) testing at up to 2,000 volts on MOSFETs and diodes on wafers and to quantify individual device leakage current. The unique WaferPak" Contactor from Aehr utilizes arcing mitigation technology to prevent high voltage arcing on the wafer, particularly in die-to-die geometries with tiny pitches. A single touchdown of up to 2,000 volts can be administered during a whole-wafer HTRB stress test on silicon carbide or gallium nitride technology.

The FOX-P system's versatility allows clients to create solutions with sophisticated testing capabilities for their power electronic device wafers. Electric car traction inverters and onboard chargers require that manufacturers supply products with greater dependability and parametric stability. These capabilities allow manufacturers to meet these requirements. Test and burn-in at the wafer level improve yield loss management and product dependability. In the end, consumers gain from increased dependability and lower prices.

“In addition to the obvious cost advantage of removing these device failures before they are put into a module with many other devices, companies also want to stabilize the inherent early life drift of the threshold voltages (Vth) observed in silicon carbide MOSFETs and then select devices with matching threshold voltages to be put in multi-chip modules. Feedback from current and a number of new potential customers has been very positive, and we have already taken orders for both systems and WaferPaks for these new options. This includes a new major silicon carbide customer announced last month and another brand-new customer who just this week ordered WaferPaks for a planned FOX-P system purchase from us for their silicon carbide products. We expect these new enhancements to drive incremental bookings and revenue for our FOX-NP systems for new product introduction and engineering qualification needs, as well as our FOX-XP multi-wafer systems to be used for high-volume production with these new features,” concludes Erickson.

Silicon carbide power devices, silicon photonics, and other optical devices, 2D and 3D sensors, flash memories, Gallium Nitride (GaN), magnetic sensors, microcontrollers, and other cutting-edge ICs can all be functionally tested and burned in/cycled on the FOX-XP, FOX-NP, and FOX-CP systems, which are available with numerous WaferPak Contactors (full wafer test) or multiple DiePak Carriers (singulated die/module test) configurations.