How GaN is Transforming the Future of Semiconductors?

How GaN is Transforming the Future of Semiconductors?

Gallium nitride (GaN), a compound of gallium (atomic number 31) and nitrogen (atomic number 7), is a semiconductor material with a broad bandgap and a rigid hexagonal crystal structure.

 

Fremont, CA: Production of all products, from refrigerators and microwave ovens to gaming consoles and cellphones, has been delayed due to a global scarcity of semiconductors. According to experts, the sector could take months to recover, but shortages are permanently altering home appliances.

For decades, the industry has relied on silicon, yet chip shortages make electrical gadgets more environmentally friendly, efficient, as well as compact. With it's advantages, such as being easier and faster to manufacture than silicon chips, more industries are turning to gallium nitride (GaN).

Tech Radar Pro is a professional surveillance system. How shortages are harming consumer electronics and shifting the industry away from silicon, according to Stephen Oliver, Vice President of Corporate Marketing and Investor Public Relations at Navitas Semiconductor. Anker, Belkin, Aukey, Hyper,Dell, Lenovo, OPPO, RAVPower, and Verizon are among the firms that use NavitasGaN chips.

Why GaN is so important?

Gallium nitride (GaN), a compound of gallium (atomic number 31) and nitrogen (atomic number 7), is a semiconductor material with a broad bandgap and a rigid hexagonal crystal structure.The bandgap is the energy necessary to liberate electrons from orbits around the nucleus, and at 3.4 eV, gallium nitride has a bandgap that is more than three times that of silicon, hence the designation "wide" bandgap or WBG. It certainly will be.

Because the bandgap controls the electric field that a material can withstand, gallium nitride's greater bandgap enables the fabrication of semiconductors with very short or narrow depletion zones, resulting in device designs with extremely high carrier densities.Ultra-low resistance and capacitance are achieved with considerably smaller transistors and shorter current channels, enabling speeds up to 100 times quicker.

The basic line is that GaN technology can manage enormous electric fields in a considerably smaller form factor than standard silicon while also delivering considerably faster switching. Furthermore, GaN technology has a higher maximum operating temperature than silicon-based technology.

GaN is becoming more relevant because it may give dramatically increased performance across a wide range of applications while consuming less energy and taking up less physical space than traditional silicon technology.Gallium nitride technology is increasingly critical in some applications where silicon has hit its physical limits as a power conversion platform, while in others it combines the benefits of efficiency, switching speed, compactness, and high temperature functioning. As a result, GaN is becoming increasingly appealing.

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