Cambridge GaN Devices (CGD)
The Leader in Gallium Nitride (GaN) Power Semiconductor Technology

Cambridge GaN Devices (CGD), founded in 2016 by a team of visionary entrepreneurs, has rapidly emerged as a leader in the field of Gallium Nitride (GaN) power semiconductor technology. With a global presence spanning five locations, including Taiwan, Cambridge GaN Devices has grown from its humble beginnings into a thriving organization of nearly 60 experts.

The company is delivering its second generation of ICeGaN™ GaN HEMTs to markets currently estimated to be worth in excess of $30B. It is in a unique space to disrupt multiple industries like consumer and industrial power supplies, lighting, data centres and automotive HEV/EV, thanks to its innovative and easy-to-use technology that provides efficient, sustainable, and more cost-effective power solutions for electronic equipment.

Dr. Giorgia Longobardi, CEO and co-founder of CGD, says, “CGD is poised to become one of the leaders in enabling a sustainable world. As we move to a net-zero carbon society with rapidly increasing levels of electrification, we need clean and renewable sources of electricity and more efficient conversion methods.”

GaN provides the optimum conversion solution, reducing power losses by more than 50 percent and increasing energy conversion efficiency to above 99 percent. To take just one application example, if all data centers were to adopt GaN, this would save 26.9 TWh of energy per year or 19,000,000 metric tons of CO2—the equivalent of 3,709,284 homes’ electricity use for one year.

The two main factors that make CGD’s GaN technology stand out are its ease of use, ruggedness, and reliability.

Unlike other discrete or hybrid solutions, CGD’s ICeGaN HEMTs are fully integrated, GaN-only devices. This approach leads to several key advantages. First, devices are stable, reliable, and simple to drive, using an internal, monolithically integrated GaN interface. In other words, they can be driven exactly like a traditional silicon MOSFET, using standard drivers. When using ICeGaN, designers can easily and quickly reap the benefits of GaN technology, such as increased power density, reduced BOM, and smaller size.

Professor Florin Udrea, CTO and co-founder, CGD, says, “ICeGaN HEMTs possess a unique set of intrinsic capabilities that together elevate device reliability well above current state of-the-art GaN devices from competitors while approaching the ruggedness of state-of-the-art Si-based devices.”

CGD has also established a strong supply chain infrastructure. Its ICeGaN HEMTs are made by the world’s largest semiconductor maker, TSMC. Devices are packaged by the world’s largest packaging house, ASE. By working with the leading companies, CGD is matching its innovative technology with the best manufacturing companies available, ensuring that high-quality products are available in mass-production volumes. Recently, TSMC acknowledged the strength of CGD’s GaN technology by presenting the company with its Innovation Zone Award for product differentiation.

“We believe that TSMC has the most mature and reliable process in the industry, which is why we chose to have our proprietary ICeGaN technology SoCs made there,” says Dr. Longobardi.

Recently, CGD introduced the H2 series, designed to optimize efficiency in various applications. With products covering different on-state resistances, ranging from 55 mΩ to 240 mΩ, the H2 series offers solutions for consumer electronics and low power industrial markets. It focuses on reducing no-load and light-load consumption, enhancing efficiency, and meeting the regulatory demands of sustainability-conscious consumers.

CGD is driven by its commitment to innovation, collaboration, and sustainability. As the power semiconductor industry continues to evolve, the company remains dedicated to developing innovative solutions that empower its customers to achieve higher efficiency, power density, reliability, and cost effectiveness. With its expertise and values, CGD is poised to shape the future of power electronics.